Hybrid Pixels With Si Photodiode and 4H-SiC MOSFETs Using Direct Heterogeneous Bonding Toward Radiation Hardened CMOS Image Sensors

نویسندگان

چکیده

For radiation hardened image sensors, a Silicon-On-Insulator (SOI) -Si/ 4H-SiC hybrid pixel device was developed. The consists of one Si photodiode and three nMOSFETs. At fabrication, SOI substrate directly bonded on via SiO2. After bonding, the base silicon Buried Oxide (BOX) were removed by TMAH wet-etching. By using this SOI-Si/ substrate, SOI-Si photodiodes nMOSFETs integrated in same substrate. As result, response to light illumination successfully demonstrated.

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ژورنال

عنوان ژورنال: IEEE Electron Device Letters

سال: 2022

ISSN: ['1558-0563', '0741-3106']

DOI: https://doi.org/10.1109/led.2022.3200124